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| GaAs MMICs GN8062 GN8062 GaAs IC For semiconductor laser drive s Features q q q 1 2 3 4 6.40.2 8 7 6 5 Unit : mm High output Pulse current and DC bias current can be controlled. 10max. 2.540.25 High-speed switching 0.7min. 4.5max. 4.0max. s Absolute Maximum Ratings (Ta = 25C) Parameter Power supply voltage Symbol VDD VSS VIN Pin voltage VIp *5 Rating 6 -6 - 0.5 to VDD-1.5 1.5 to VDD VDD 50 40 145 700 150 - 55 to +150 Unit V V 0 to 15 7.620.2 V V V mA mA mA mW C C C VOUT* 1 Power current Output current Allowable power dissipation Channel temperature Storage temperature Operating ambient temperature *1 *2 *3 *4 *5 IDD ISS *4 1 : GND 2 : NC 3 : NC 0.35max. 4 : OUT 5 : VIP 6 : VDD 7 : VIN 8 : VSS 8-Lead Plastic DIL Package IOUT PD* 2 Tch Tstg Topr *3 -10 to +75 Do not apply the voltage higher than the set VDD. Guaranteed value of the unit at Ta= 25C. Range in which the IC circuit function operates and not the guaranteed range of electric characteristics. IDD is a current when the pulse output current is zero. Voltage when the constant current source has been connected. s Electrical Characteristics (Ta = 25C) Parameter Pulse output current Supply current Input voltage Rise time Fall time Symbol Ipmax. Ipmin. IDD* 1 ISS VIH VIL tr* 2 tf* 2 3 3 VDD= 5V, VSS= - 5V, I p=100mA RL=10 Test circuit 1 1 2 2 Condition VDD= 5V, VSS= -5V, VIN= 2V, I p=120mA, RL=10 VDD = 5V, VSS= -5V, VIN= 0.4V, Ip=120mA, RL=10 VDD= 5V, VSS= - 5V, VIN= 0.4V Ip= 0, RL=10 2.5 0.4 7 5 Min 100 Typ 120 1 35 25 5 50 40 Max Unit mA mA mA mA V V ns ns 1.3typ. 0.5 GaAs MMICs GN8062 *1 *2 The current value to be supplied from the 5V power supply is a total sum of this value plus the pulse output current and bias output current. Waveform of input and output signals Input signal 2S Output waveform 90% 10S 2.5V min. 0.4V max. 10% tr tf tr *** 10% to 90% tf *** 90% to 10% * The rise/fall time of the input signal is 2ns (10 to 90%) Test circuit 1 VIN C2 -5V C1 - + C2 8 7 6 5 + - 5V C1 IP=120mA Test circuit 2 0.4V -5V C1 - + C2 C2 A 8 7 A + - 5V C1 IP=0mA 6 5 1 2 3 4 A RL C1 + 5V - C2 1 2 3 4 RL C1 + 5V - C2 Test circuit 3 PULSE GENERATOR -5V C1 - + C2 8 7 6 5 R2 C2 + - 5V C1 IP=100mA C1 : 0.1F C2 : 3.3F R1 : 10 R2 : 50 1 2 3 4 R1 C1 FET PROBE + 5V - C2 GaAs MMICs s Block Diagram INSIDE GN8062 VDD VIN +5V OUTSIDE GN8062 GN8062 VSS VDD VSS LASER DIODE OUT VSS VIP VSS GND NC NC OUT 1 2 3 4 8 7 6 5 VSS VIN VDD VIP from CONTROL CIRCUIT s Caution for Handling 1) The recommended VIN voltage is 2.5 to 3V for [H] and 0 to 0.4V for [L]. 2) Do not apply VIN while the power supply is OFF. 3) For the current source to be connected to the V IP pin, use a Si bipolar transistor as shown in the circuit diagram. (Example: 2SD874) To connect a resistor to the emitter or collector, use a resistor of a few ohm. The use of higher resistor may cause large change in the voltage at the V IP pin, and may make the output waveform distortion. (See the pulse output current control example). To use another current control circuit, set so that the VIP pin voltage becomes around 2V. 4) When mounting, minimize the connection distance between the semiconductor laser and IC, and use the chip parts (C, R) of less parasitic effects. 5) Attention to damage by the power surge (see the example connection of the pin protection circuit). During handling, take care to ground the human body and solder iron tip. 6) When the power supply is turned ON and OFF, set the current value of the current source connected to the VIP pin to zero. This is important to prevent the large current flow through the semiconductor laser during power ON/OFF. When the power supply is ON, be sure to turn ON VDD, after VSS is completely equal to - 5V. When the power supply is OFF, be sure to turn OFF VSS, after VDD is completely 0V. 7) Pay attention to release the heat. MA3068(VZ=6.8V,Cd=85pF,RZ=6) GN8062 GND VSS NC NC VIN VDD 200 to 2k -5.0V 50 5.0V OUT VIP Connection example of pin protection circuit GN8062 GND VSS NC NC VIN VDD I COLLECTOR OUT VIP - + IB 0.22mF 5 VEE=-5 to 0V Example of pulse output current control circuit |
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